Technical Seminar on Bi-cmos Technology. In BiCMOS technology, both the MOS and bipolar device are fabricated on the same chip. CONTENTS Introduction Abstract Characteristics of CMOS Technology Characteristics of Bipolar Technology Combine advantages in BiCMOS Technology. Explore BiCMOS Technology with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics.
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Some of these schemes will be discussed later.
Speed is the only restricting factor, especially when large capacitors must be driven. Driving PC board traces consume significant power, both in overcoming the larger capacitances on the PC board and through larger signal swings to overcome signal cross talk and noise on the PC board. Various schemes have been proposed to get around this problem, resulting in gates with logic swings equal to the supply voltage at the expense of increased complexity. The analog section of these chips includes wideband amplifiers, filters, phase locked loops, analog-to-digital converters, digital-to-analog converters, operational amplifiers, current references, and voltage references.
The impedances Z 1 and Z 2 are necessary to remove the base charge of the bipolar transistors when they are being turned off. Are you interested in any one of this Seminar, Project Topics.
An attentive reader may notice the similarity between this structure and the TTL gate, described in the addendum on bipolar design. For similar fanouts and a comparable technology, the propagation delay is about two to five times smaller than for the CMOS gate.
BiCMOS Process Technology
There exists a short period during the transition when both Q 1 and Q 2 are on simultaneously, thus creating a temporary current path between VDD and GND.
We first discuss the gate in general and then provide a more detailed discussion of the steady-state and transient characteristics, tecnnology the power consumption. Noise issues from digital electronics can also limit the practicality of forming an SOC with high-precision analog or RF circuits.
This leads to a steady-state leakage current and power consumption.
Bicmos Technology Full Seminar Report, abstract and Presentation download
It comes at the expense of an increased collector-substrate capacitance. Therefore, turning off the devices as fast as possible is bicmod utmost importance. This technology opens a wealth of new opportunities, because it is now possible to combine the high-density integration of MOS logic with the current-driving capabilities of bipolar transistors.
A low Vinon the other hand, causes M 2 and Q 2 to turn on, while M 1 and Q 1 are in the offstate, resulting in a high output level. The same is also true for VOL. Large-scale microcomputer systems with integrated peripherals, the complete digital processor of cellular phone, and the switching system for a wire-line data-communication system are some of the many applications of digital SOC systems.
First of all, the logic swing of the circuit technoloby smaller than the supply voltage. Download your Full Reports for Bicmos Technology Semjnar MOS offers an inverter with near-perfect characteristics such as high, symmetrical noise margins, high input and low output impedance, high gain in the transition region, high packing density, and low power dissipation.
Because the process step required for both CMOS and bipolar are similar, these steps cane be shared for both of them. seminaar
The shortcomings of these elements as resistors, as can the poly silicon gate used as part of the CMOS devices. For instance, during a high-to-low transition on the input, M 1 turns off first. Before a high-performance analog system can be integrated on a digital chip, the analog circuit blocks must have available critical passive components, such as resistors and capacitors.
The shortcomings of these elements as resistors, beyond their high parasitic capacitances, are the resistors, beyond their high parasitic capacitances, are the resistor’s high temperature and voltage coefficients and the limited control of the absolute value of the resistor. Though additional process steps may be needed for the resistors, it may be possible to alternatively use the diffusions steps, such as the N and P implants that make up the drains and sources of the MOS devices.
Its resistivity is chosen so that it can support both devices. Then mail to us immediately to get the full report. Download your Full Reports for Bicmos Technology. Consider the high level. However it took 30 years before this idea was applied to functioning devices to be used in practical applications, and up to the late this trend took a turn when MOS technology caught up and there was a cross over between bipolar and MOS share.
A system that requires power-supply voltages greater than 3. However, this is achieved at a price. In the BiCMOS structure, the input stage and the phase-splitter are implemented in MOS, which results in a better performance and higher input impedance. The output voltage of VDD? In this case, the nonrecurring engineering costs of designing the SOC chip and its mask set will far exceed the design cost for a system with standard programmable digital parts, standard analog and RF functional blocks, and discrete components.
Superior matching and control of integrated components also allows for new circuit architectures to be used that cannot be attempted in multi-chip architectures. These steps create linear capacitors with low levels of parasitic capacitance coupling to other parts of the IC, such as the substrate. In steady-state operation, Q 1 and Q 2 are never on simultaneously, keeping the power consumption low.
Both use a bipolar push-pull output stage. The result is a low output voltage. In recent years, improved technology has made it possible to combine complimentary MOS transistors and bipolar devices in a single process at a reasonable cost.
Added process steps may be required to achieve characteristics for resistors and capacitors suitable for high-performance analog circuits.